Method for eliminating electroplating void defects on wafer surface

Application number 201610088974. 9

Application date 2016. 02. 17

Applicant Shanghai Huali Microelectronics Co., Ltd.

Address: No.568, Gaosi Road, Zhangjiang Hi-Tech Park, Pudong New District, Shanghai 201210

Inventor Su Yaqing Wenjing Zhang Chuanmin

Patent agency Shanghai Tianchen Intellectual Property Agency (Special General Partnership) 31275 Attorney Wu Shihua Chen Huihong

Name of invention

A method for eliminating electroplating void defects on the wafer surface

Summary

The present invention discloses a method for eliminating electroplating void defects on the surface of a wafer. When the grooves or through holes on the surface of the wafer are electroplated and filled, a circuit with a controllable current direction is used to form the current magnitude and direction. Adjustable circuit, which alternately applies forward and reverse currents to the wafer to form an electroplating/etching sequence, so that during the electroplating process, not only can electroplating on the wafer surface, but also the coating on the wafer surface can be dissociated In order to obtain better step coverage and good trench (via) openings, a perfect filling process can be formed, thereby reducing void defects formed during the filling process.
An elimination crystal Method of electroplating void defects on round surface.pdf